![]() In the associated evaluation kit ( left), the slow silicon totem-pole is driven from a NCP51530. “The low on resistance and compact chip size ensure low capacitance and gate charge.” It has 650V SiC devices in TO-247-4L and D2PAK-7L packages, plus 650V silicon ‘SuperFet III mosfets. On Semiconductor offers a range of SiC mosfets that provide increased efficiency when compared to silicon mosfets,” according to the company. Silicon, GaN or SiCĭepending on the switch technology selected for the high-speed leg of the totem pole, for GaN the IC can be used with the NCP51820 half bridge HEMT gate driver, or for SiC mosfets the NCP51561 dual-channel isolated gate driver (4.5A source and 9A sink peak) can be used. It comes in a SOIC-16 package, and there is an evaluation kit. Operation across 90 – 265Vac is possible, with use recommended at up to 350W. With 230Vac mains input, close to 99% efficiency is possible at 300W, according to the company. Cycle-by-cycle current limit is realised without a Hall effect sensor. ![]()
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